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SPI11N60S5

Part No SPI11N60S5
Manufacturer INFINEON
Description Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
Lead Free Status / RoHS Status Lead Free / RoHS compliant
Availability:12657 pcs
Quantity Unit Price Ext. Price
1+ $0.7373 $74
10+ $0.7226 $361
100+ $0.7004 $700
1000+ $0.6783 $678
10000+ $0.6488 $649
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Specifications

Data sheet

Min Operating Temperature-55 °C
Drain to Source Breakdown Voltage600 V
Gate to Source Voltage (Vgs)20 V
Current Rating11 A
Fall Time20 ns
RoHSCompliant
Max Operating Temperature150 °C
Drain to Source Voltage (Vdss)600 V
Power Dissipation125 W
Drain to Source Resistance380 mΩ
Continuous Drain Current (ID)11 A
Element ConfigurationSingle
Rise Time35 ns
Turn-Off Delay Time150 ns
Halogen FreeNot Halogen Free
Number of Pins3
Input Capacitance1.46 nF
Voltage Rating (DC)600 V
Lead FreeLead Free
Rds On Max380 mΩ
Case/PackageTO-262-3
Max Power Dissipation125 W

Introduce

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