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SI3909DV-T1-E3

Part No SI3909DV-T1-E3
Manufacturer Vishay Siliconix
Description MOSFET 2P-CH 20V 6TSOP
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Data sheet

RdsOn(Max)@Id200mOhm @ 1.8A, 4.5V
Vgs(th)(Max)@Id4nC @ 4.5V
Vgs500mV @ 250µA (Min)
Configuration2 P-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
OperatingTemperatureSurface Mount
ProductStatusObsolete
Package/Case6-TSOP
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeSOT-23-6 Thin, TSOT-23-6
InputCapacitance(Ciss)(Max)@Vds1.15W
SeriesTrenchFET®
Qualification
SupplierDevicePackage
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C-
PackageTape & Reel (TR)
Power-Max-55°C ~ 150°C (TJ)

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