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PDTD113ES,126

Part No PDTD113ES,126
Manufacturer NXP Semiconductors.
Description TRANS PREBIAS NPN 500MW TO92-3
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

DC Current Gain (hFE) (Min) @ Ic, Vce:33 @ 50mA, 5V
Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type:Through Hole
Packaging:Tape & Box (TB)
Supplier Device Package:TO-92-3
Resistor - Emitter Base (R2):1 kOhms
Current - Collector (Ic) (Max):500mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3
Resistor - Base (R1):1 kOhms
Voltage - Collector Emitter Breakdown (Max):50V
Power - Max:500mW
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:sale@wisdommobility.com
Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Series:-
Base Part Number:PDTD113
Other Names:934059141126 PDTD113ES AMO PDTD113ES AMO-ND
Transistor Type:NPN - Pre-Biased
Current - Collector Cutoff (Max):500nA

Introduce

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