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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXFT12N100F
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IXFT12N100F

Part No IXFT12N100F
Manufacturer IXYS RF
Description MOSFET N-CH 1000V 12A TO268
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):1000V
Power Dissipation (Max):300W (Tc)
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type:Surface Mount
Packaging:Tube
Supplier Device Package:TO-268 (IXFT)
Vgs(th) (Max) @ Id:5.5V @ 4mA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 1000V 12A (Tc) 300W (Tc) Surface Mount TO-268 (IXFT)
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:14 Weeks
Email:sale@wisdommobility.com
FET Type:N-Channel
Series:HiPerRF™
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:2700pF @ 25V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:1.05 Ohm @ 6A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:77nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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