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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSC884N03MSGXT
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BSC884N03MSGXT

Part No BSC884N03MSGXT
Manufacturer Infineon Technologies
Description -
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Data sheet

Operating Temperature-55u00b0C ~ 150u00b0C (TJ)
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Current - Continuous Drain (Id) @ 25u00b0C17A (Ta), 85A (Tc)
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs4.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 250u00b5A
Supplier Device PackagePG-TDSON-8-1
Drain to Source Voltage (Vdss)34 V
SeriesOptiMOSu2122
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Package / Case8-PowerTDFN
TechnologyMOSFET (Metal Oxide)
MfrInfineon Technologies
Part StatusObsolete
Vgs (Max)u00b120V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
PackageTape & Reel (TR)

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