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BSB019N03LXG

Part No BSB019N03LXG
Manufacturer Infineon
Description Power Field-Effect Transistor, 31A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN
Lead Free Status / RoHS Status Contains lead / RoHS compliant
Availability:10353 pcs
Quantity Unit Price Ext. Price
1+ $8.0 $800
10+ $7.84 $3920
100+ $7.6 $7600
1000+ $7.36 $7360
10000+ $7.04 $7040
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Specifications

Data sheet

Min Operating Temperature-40 °C
Drain to Source Breakdown Voltage30 V
Gate to Source Voltage (Vgs)20 V
MountSurface Mount
Fall Time6.4 ns
Turn-On Delay Time10 ns
RoHSCompliant
Radiation HardeningNo
Max Operating Temperature150 °C
Drain to Source Voltage (Vdss)30 V
Power Dissipation2.8 W
Drain to Source Resistance1.9 mΩ
Continuous Drain Current (ID)31 A
Rise Time7.8 ns
Turn-Off Delay Time42 ns
Number of Pins3
Input Capacitance8.4 nF
Rds On Max1.9 mΩ
Max Power Dissipation89 W

Introduce

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