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2N6800

Part No 2N6800
Manufacturer Infineon
Description Power Field-Effect Transistor, 3A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
Availability:11824 pcs
Quantity Unit Price Ext. Price
1+ $9.702 $970
10+ $9.508 $4754
100+ $9.2169 $9217
1000+ $8.9258 $8926
10000+ $8.5378 $8538
The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Specifications

Data sheet

Min Operating Temperature-55 °C
Drain to Source Breakdown Voltage400 V
Gate to Source Voltage (Vgs)20 V
MountThrough Hole
RoHSNon-Compliant
Radiation HardeningNo
Max Operating Temperature150 °C
Drain to Source Voltage (Vdss)400 V
Power Dissipation25 W
Drain to Source Resistance1 Ω
Continuous Drain Current (ID)2 A
Lifecycle StatusProduction (Last Updated: 2 years ago)
Contact PlatingLead, Tin
Number of Pins3
Number of Elements1
Case/PackageTO-39

Introduce

We can supply 2N6800 , send us a request quote to request 2N6800 pirce and lead time.Wisdom Mobility is a professional electronic components distributor. With 10+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2N6800.The price and lead time for 2N6800 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part 2N6800.We look forward to working with you to establish long-term relations of cooperation